Single-side polishing of silicon carbide wafers
Applicable Equipment
YH2MG81 Series Vertical High-Precision Grinding and Polishing Machine
Equipment Highlights:
1. The machine tool design has good rigidity and high precision
Key component design uses finite element analysis;
Key guides and bearings use high-quality domestic brands;
Imported precision electro-hydraulic proportional valves control polishing pressure;
Using patented structure, ensuring that the workpiece is evenly stressed during processing, the product has high precision and good consistency;
2. Polishing disc maximum speed 90r/min, workpiece disc maximum speed 90r/min, high polishing efficiency;
3. Four workpiece shafts can independently control polishing pressure, polishing time, and speed, allowing for differentiated processing;
4. The equipment is suitable for automated loading and unloading;
5. Parts in contact with the abrasive liquid use rust-proof materials or rust-proof treatment to ensure the long-term stable operation of the machine tool;
6. Using an overall protective device, the equipment is more environmentally friendly and safe, and a safety light curtain is installed on the manual operation side;
7. PLC control, user-friendly human-machine interface, key sensors use parameterized display, convenient for operation and control
Main Process:
CMP (Chemical Mechanical Polishing)
Rough polishing: Generally, magnesium oxide is used for rough polishing. The purpose is to remove residual mechanical damage on the surface of the silicon wafer. Generally, it is required to remove 20~30μm from the surface.
Fine polishing: Silicon dioxide is used for fine polishing. The purpose is to remove slight damage and haze defects left on the surface of the silicon wafer after the first polishing. It is required to remove a thickness of 2~3μm from the surface.
